Samsung has launched a brand new vertical NAND (V-NAND) with the very best bit density but.
The South Korean tech big stated on Tuesday that it started mass manufacturing of its ninth-generation V-NAND this month, which is able to “set the development for the high-density, high-performance solid-state drive (SSD) market that meets the wants for the subsequent era of AI”,
The 1 Terabit (Tb) Triple Degree Cell (TLC) V-NAND has its bit density elevated by as much as 50% in comparison with its eighth era predecessor that was launched in 2022. This was achieved due to the chip was made with the smallest chip. cell measurement and the thinnest mould to this point, Samsung stated.
It additionally has a double-stack construction, the place there are two stacks of cells in vertical layers as a substitute of 1. Samsung stated it utilized channel gap etching on these stacks, the place a gap is drilled via the cells in layers to type electron pathways, a activity that’s harder the extra layers there are.
The corporate stated it additionally eradicated dummy channel holes to cut back the floor space of the cells and utilized applied sciences to cut back mobile interference and lengthen their lifespan.
The ninth era V-NAND additionally has the most recent Toggle 5.1 NAND interface utilized, permitting it to have a knowledge enter/output pace of as much as 3.2 Gbps, a 33% improve over its predecessor, Samsung stated, whereas power consumption has additionally elevated. has been lowered by 10%.
It additionally helps the PCIe 5.0 interface, which has twice the bandwidth of PCIe 4.0 at 32GT/s, which Samsung stated it’ll use to consolidate its management within the high-performance SSD market.
Whereas the TLC mannequin is already in manufacturing, Samsung will start mass manufacturing of the quad-level cell (QLC) mannequin, the place one cell can retailer 4 bits of information, within the second half of the yr.